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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION *Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz *High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS *Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 0.1 A PC 0.2 W TJ 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3356 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 A hFE DC Current Gain IC= 20mA ; VCE= 10V 50 300 fT Current-Gain--Bandwidth Product IC= 20mA ; VCE= 10V 7 GHz Cre S21e2 Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.55 1.0 pF Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 11.5 dB NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 2.0 dB hFE Classification Class Marking hFE Q R23 50-100 R R24 80-160 S R25 125-250 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor TYPCIAL CHARACTERISTICS (Ta=25) 2SC3356 Total Power DissipationPtd(mW) DC Current Gain vs. Collector Current 200 DC Current Gain HFE Total Power Dissipation vs. Ambient Temperature 250 200 150 100 50 0 25 50 75 100 125 150 150 100 50 0 0.1 1 10 100 Collectot current IC(mA) Ambient TemeperatureTA( ) Gain Bandwidth Product Vs.Colllector Current 10 Insertion Power Gain Vs. Collector Current 15 Gain Bandwidth Product fT(GHz) 1 1 10 100 Insertion Power Gain ( | S21|2)(dB) 10 5 0 1 10 100 Collect or Current Ic(mA) Collector Current Ic(mA) Insertion power gain S212 (dB) maximum unilateral power gainGUM(dB) 5 Noise C Figure vs.Collector Insertion Power Gain and Maximum Unilateral Power Gain vs. Frequency 30 25 20 15 10 5 0.1 1 10 4 Noise Figure NF(dB) 3 2 1 0 1 Collector Current Ic(mA) 10 100 Frequency(GHz) isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor SMITH CHART 2SC3356 Test ConditionVCE=10V, IC=20mA , ZO=50f= 0.2GHz-2.0GHz S21-FREQUENCY ConditionVce=10V/Ic=20mA 90 120 20 S12- FREQUENCY ConditionVce=10V,Ic=20mA 90 120 0.25 0.2 0.15 150 0.1 0.05 180 0.2GHz 60 15 10 5 60 30 2GHz0 150 180 0.2GHz 30 2GHz 0 -150 -120 -60 -90 -30 -150 -120 -90 -60 -30 S11S22 -FREQUENCY isc Websitewww.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor S-PARAMETER VCE = 10 V, IC = 20 mA Freque. GHz 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.2 MAG 0.45 0.4 0.41 0.41 0.42 0.42 0.42 0.42 0.41 0.45 2SC3356 S11 ANG -70.42 -177.3 150.4 126.3 104.6 85.22 65.91 47.16 27.84 -70.42 MAG 16.73 9.3 6.2 4.69 3.75 3.17 2.74 2.4 2.13 16.73 S21 ANG 150.2 94.32 72.41 55.83 40.65 26.22 13.54 1.03 -12.34 150.2 MAG 0.04 0.06 0.07 0.1 0.12 0.14 0.17 0.2 0.22 0.04 S12 ANG 89.27 65.65 55.63 47.91 38.96 30.11 21.39 12.16 2.27 89.27 MAG 0.42 0.21 0.17 0.17 0.17 0.17 0.18 0.19 0.21 0.42 S22 ANG -12.05 -53.52 -76.62 -97.1 -119 -138.9 -158.9 -177.5 164.93 -12.05 VCE = 10 V, IC = 5 mA Freque. GHz 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.2 MAG 0.77 0.62 0.52 0.49 0.48 0.48 0.48 0.48 0.47 0.46 S11 ANG -3.8 -112.9 -174.9 150 122.4 99.54 78.4 58 37.79 17.69 MAG 6.78 6.04 4.82 3.81 3.09 2.64 2.27 1.97 1.75 1.66 S21 ANG -177.5 117.8 83 61.86 43.61 27.16 13.76 0.66 -13.71 -25.39 MAG 0.06 0.08 0.09 0.1 0.11 0.12 0.14 0.17 0.18 0.2 S12 ANG 99.12 50.85 36.61 30.36 24.14 18.43 13.12 6.97 0.2 -9.01 MAG 0.8 0.44 0.35 0.32 0.31 0.31 0.32 0.32 0.34 0.36 S22 ANG 6.86 -48.92 -73.18 -93.35 -113.7 -133.2 -153.3 -172.6 168.78 150.36 isc Websitewww.iscsemi.cn |
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